Includes bibliographies and indexes.
|Statement||editors, Noble M. Johnson, Stephen G. Bishop, George D. Watkins.|
|Series||Materials Research Society symposia proceedings,, v. 46|
|Contributions||Johnson, Noble M., Bishop, Stephen G., Watkins, George D., Materials Research Society.|
|LC Classifications||TK7871.85 .M53 1985|
|The Physical Object|
|Pagination||xv, 604 p. :|
|Number of Pages||604|
|LC Control Number||85019753|
Complex Defects in Semiconductors - Volume - B. MonemarAuthor: B. Monemar. Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. "Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. Request PDF | Intrinsic Point Defects in Semiconductors | IntroductionSiliconOther Group IV SemiconductorsII - VI SemiconductorsIII-V SemiconductorsSummary and.
The electronic states of these defect pairs as well as the total electronic interaction energies between the two defects are evaluated. Calculations are performed using the recursion method and a. This chapter discusses the atomoc and electronic structure of dopant impurities, point defects, Dangling Bond (DB), and hydrogen in germanium, along the way comparing with silicon. Germanium, like silicon, is a semoconductor with the diamond crystal by: 2. In summary, PAS gives microscopic information about vacancy defects in semiconductors in the concentration range 10 15 19 cm The positron lifetime is the fingerprint of the open volume associated with a defect, and it can be used to identify mono- and . Identification of Defects in Semiconductors Michael Stavola (Eds.) GENERAL DESCRIPTION OF THE SERIES Since its inception in , the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well .
A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of. Dopants and Defects in Semiconductors covers the theory, experimentation, and identification of impurities, dopants, and intrinsic defects in semiconductors. The book fills a crucial gap between solid-state physics and more specialized course texts. The authors first present introductory concepts, including basic semiconductor theory, defect 4/5(1). A rich variety of defects can form, but in general atomic structures have not been determined. The process of site switching from substitutional to interstitial locations which occurs by the selective trapping of self-Interstitials is proving to be invaluable in elucidating the mechanisms of various defect reactions, particularly those Cited by: Abstract. Resonance depth profiling with 15 N beams and in-situ capacitance-voltage profiling techniques were used to measure hydrogen concentration and migration in the near-surface of silicon. Spontaneous hydrogen injection into silicon has been discovered in samples exposed to room air, and also in the samples annealed in the vacuum of about 2×10E-6 : A. E. Jaworowski.